Other articles related with "negative bias temperature instability (NBTI)":
128502 Wei-Tai Gong(巩伟泰), Yan Li(李闫), Ya-Bin Sun(孙亚宾), Yan-Ling Shi(石艳玲), and Xiao-Jin Li(李小进)
  Investigation of degradation and recovery characteristics of NBTI in 28-nm high-k metal gate process
    Chin. Phys. B   2023 Vol.32 (12): 128502-128502 [Abstract] (105) [HTML 0 KB] [PDF 823 KB] (27)
108503 Yan Zeng(曾严), Xiao-Jin Li(李小进), Jian Qing(卿健), Ya-Bin Sun(孙亚宾), Yan-Ling Shi(石艳玲), Ao Guo(郭奥), Shao-Jian Hu(胡少坚)
  Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models
    Chin. Phys. B   2017 Vol.26 (10): 108503-108503 [Abstract] (631) [HTML 1 KB] [PDF 701 KB] (265)
97304 Cao Yan-Rong (曹艳荣), Yang Yi (杨毅), Cao Cheng (曹成), He Wen-Long (何文龙), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃)
  Recovery of PMOSFET NBTI under different conditions
    Chin. Phys. B   2015 Vol.24 (9): 97304-097304 [Abstract] (806) [HTML 1 KB] [PDF 362 KB] (395)
117303 Cao Yan-Rong (曹艳荣), He Wen-Long (何文龙), Cao Cheng (曹成), Yang Yi (杨毅), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃)
  Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress
    Chin. Phys. B   2014 Vol.23 (11): 117303-117303 [Abstract] (585) [HTML 1 KB] [PDF 365 KB] (454)
57304 Zhang Yue (张月), Zhuo Qing-Qing (卓青青), Liu Hong-Xia (刘红侠), Ma Xiao-Hua (马晓华), Hao Yue (郝跃)
  Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET
    Chin. Phys. B   2014 Vol.23 (5): 57304-057304 [Abstract] (539) [HTML 1 KB] [PDF 303 KB] (388)
309 Cao Yan-Rong(曹艳荣), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), and Hu Shi-Gang(胡仕刚)
  Effect of substrate bias on negative bias temperature instability of ultra-deep sub-micro p-channel metal--oxide--semiconductor field-effect transistors
    Chin. Phys. B   2009 Vol.18 (1): 309-314 [Abstract] (1309) [HTML 1 KB] [PDF 231 KB] (928)
2111 Liu Hong-Xia (刘红侠) and Hao Yue (郝跃)
  Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal--oxide--semiconductor field-effect transistors (PMOSFETs)
    Chin. Phys. B   2007 Vol.16 (7): 2111-2115 [Abstract] (1557) [HTML 1 KB] [PDF 462 KB] (885)
1445 Liu Hong-Xia(刘红侠), Li Zhong-He(李忠贺), and Hao Yue(郝跃)
  Degradation characteristics and mechanism of PMOSFETs under NBT--PBT--NBT stress
    Chin. Phys. B   2007 Vol.16 (5): 1445-1449 [Abstract] (1449) [HTML 1 KB] [PDF 458 KB] (833)
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